AES E-Library

IGFET Strain Transducers Utilizing Piezoelectric Materials

Piezoelectric materials probably comprise the largest single class of the many materials used in the construction of strain transducers. However, most transducers made with piezoelectric materials require external amplification and do not produce a D.C. response to an applied strain. By the proper use of piezoelectric materials in the construction of an insulated-gate field-effect transistor (IGFET), a strain transducer can be constructed which performs both the strain-sensing and amplification functions in one integral device. The advantages of such a device include both fast response to an applied strain and a small, well-defined sensing area. In addition, a device utilizing a piezoelectric semiconductor will give a D.C. response to an applied strain.

 

Author (s):
Affiliation: (See document for exact affiliation information.)
AES Convention: Paper Number:
Publication Date:
Permalink: https://aes2.org/publications/elibrary-page/?id=1395


(339KB)


Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member Join the AES. If you need to check your member status, login to the Member Portal.

Type:
E-Libary location:
16938
Choose your country of residence from this list:










Skip to content