This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.
(See document for exact affiliation information.)
https://aes2.org/publications/elibrary-page/?id=16429
(885KB)
Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member Join the AES. If you need to check your member status, login to the Member Portal.
