With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.
(See document for exact affiliation information.)
https://aes2.org/publications/elibrary-page/?id=18612
(1626KB)
Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member Join the AES. If you need to check your member status, login to the Member Portal.
