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The paper will discuss the basic physical design differences between the V-FET and the lateral FET. The intrinsic qualities of these devices, such as linearity and freedom from secondary breakdown, and the application of the V-FET to the design of audio amplifiers compared with bipolar devices, will be explained.
Author (s): Suwa, Hisashi; Ishitani, Akiyasu
Affiliation:
AKIYASU ISHITANI, SEMICONDUCTOR DIVISION, SONY CORPORATION, NEW YORK, NY
(See document for exact affiliation information.)
AES Convention: 51
Paper Number:1018
Publication Date:
1975-05-06
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Permalink: https://aes2.org/publications/elibrary-page/?id=2415
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Suwa, Hisashi; Ishitani, Akiyasu; 1975; Vertical Field Effect Transistor and Its Application to High Fidelity Audio Amplifiers [PDF]; AKIYASU ISHITANI, SEMICONDUCTOR DIVISION, SONY CORPORATION, NEW YORK, NY; Paper 1018; Available from: https://aes2.org/publications/elibrary-page/?id=2415
Suwa, Hisashi; Ishitani, Akiyasu; Vertical Field Effect Transistor and Its Application to High Fidelity Audio Amplifiers [PDF]; AKIYASU ISHITANI, SEMICONDUCTOR DIVISION, SONY CORPORATION, NEW YORK, NY; Paper 1018; 1975 Available: https://aes2.org/publications/elibrary-page/?id=2415