High-power audio amplifiers are often realized as PWM-switching power stages. The applicability of the MOSFET is believed to be the best, because of its lack of storage time and therefore being a very fast switch. But there often occurs the problem, that power-semiconductors don`t meet the requirements of the circuit in their specifications. If current is the limiting quantity, paralleling of switches could meet the goal. The idea of doing this, can be derived from the MOSFET, because a single device consists of hundred of cells on one chip. Therefore in this paper the MOSFET will be used as an example, because of its suitability for parelleling among other power semiconductors.
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