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Design techniques are presented for a 0.5 Mhz Class D amplifier using specially processed MOSFETs with ultra-fast intrinsic diode recovery characteristics. Design problems and solutions are presented for the power, filter and modular stages. Problems and results are discussed using error correction by loop feedback from the output filter and supply feed-forward power factor corrected quasi-resonant switching power supply.
Author (s): Hancock, Jon
Affiliation:
Siemens Components, Santa Clara, CA
(See document for exact affiliation information.)
AES Convention: 89
Paper Number:2958
Publication Date:
1990-09-06
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Session subject:
Signal Processing
Permalink: https://aes2.org/publications/elibrary-page/?id=5735
(752KB)
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Hancock, Jon; 1990; A Class D Amplifier Using MOSFETs with Reduced Minority Carrier Lifetime [PDF]; Siemens Components, Santa Clara, CA; Paper 2958; Available from: https://aes2.org/publications/elibrary-page/?id=5735
Hancock, Jon; A Class D Amplifier Using MOSFETs with Reduced Minority Carrier Lifetime [PDF]; Siemens Components, Santa Clara, CA; Paper 2958; 1990 Available: https://aes2.org/publications/elibrary-page/?id=5735