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The construction and characteristics of an experimental semiconductor microphone utilizing the piezoresistance property of silicon are described. The sensing element consists of a silicon element mounted on a cantilever beam. The output of the microphone is fed into a single transistor preamplifier and a Motorola MC 1524 integrated circuit audio power amplifier to produce a 1 watt power output at the loudspeaker.
Author (s): Sikorski, M. E.; Kuo, C. K.
Affiliation:
Engineering Experiment Station, Georgia Institute of Technology, Atlanta, GA
(See document for exact affiliation information.)
AES Convention: 31
Paper Number:451
Publication Date:
1966-10-06
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Permalink: https://aes2.org/publications/elibrary-page/?id=990
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Sikorski, M. E.; Kuo, C. K.; 1966; Semiconductor Microphone [PDF]; Engineering Experiment Station, Georgia Institute of Technology, Atlanta, GA; Paper 451; Available from: https://aes2.org/publications/elibrary-page/?id=990
Sikorski, M. E.; Kuo, C. K.; Semiconductor Microphone [PDF]; Engineering Experiment Station, Georgia Institute of Technology, Atlanta, GA; Paper 451; 1966 Available: https://aes2.org/publications/elibrary-page/?id=990